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LIST OF PUBLICATIONS Hideki
KOYAMA |
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1. Work at Tokyo Univ. of Agriculture
and Technology (as a student) Journal papers 1) N. Koshida, H. Koyama, and Y. Kiuchi, “Photoelectrochemical
behavior of n-type porous-Si electrodes”, Jpn. J. Appl. Phys. 25 (7)
1069-1072 (1986). 2) H.
Koyama
and N. Koshida, “Photoelectrochemical effects of
surface modification of n-type Si with porous layer”, J. Electrochem. Soc. 138 (1)
254-260 (1991). |
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2. Work at Tokyo Univ. of Agriculture and
Technology (as an assistant professor) Journal papers 1)
N. Koshida and H. Koyama, “Efficient
visible photoluminescence from porous silicon”, Jpn. J. Appl. Phys. 30
(7B) L1221-L1223 (1991). 2)
H. Koyama, M. Araki, Y. Yamamoto, and N. Koshida,
“Visible photoluminescence of porous Si and its related optical properties”, Jpn. J. Appl. Phys. 30
(12B) 3606-3609 (1991). 3)
N. Koshida and H. Koyama,“Visible electroluminescence
form porous silicon”, Appl. Phys.
Lett. 60 (3) 347-349 (1992). 4)
N. Koshida and H. Koyama,“Visible light emission
from porous silicon”, Optoelectronics -Devices and Technologies- 7 (1)
103-115 (1992) (Invited). 5)
N. Koshida and H. Koyama,
“Photoluminescent and electroluminescent properties of porous silicon”, Nanotechnology 3,
192-195 (1992). 6)
T. Ueno, Y. Akiba, T. Shinohara, H. Koyama, N. Koshida,
and Y. Tarui, “Radiative transition with visible light in electrochemical
anodized polycrystalline silicon”, Jpn. J. Appl. Phys. 32
(1A/B) L5-L7 (1993). 7)
H. Koyama, T. Oguro, and N. Koshida,
“Electrical quenching of photoluminescence from porous silicon”, Appl. Phys. Lett. 62 (24)
3177-3179 (1993). 8)
Y. Uchida, N. Koshida, H. Koyama, and Y.
Yamamoto, “Paramagnetic center in porous silicon: A dangling bond with C3V
symmetry”, Appl. Phys. Lett. 63
(7) 961-963 (1993). 9)
N. Koshida, H. Koyama, Y. Yamamoto,
and G. J. Collins, “Visible electroluminescence from porous silicon diodes
with an electropolymerized contact”, Appl. Phys. Lett. 63 (19)
2655-2657 (1993). 10)
N. Koshida, H. Koyama, Y. Suda, Y.
Yamamoto, M. Araki, T. Saito, K. Sato, N. Sata, and S. Shin, “Optical
characterization of porous silicon by synchrotron radiation reflectance
spectra analyses”, Appl. Phys.
Lett. 63 (20) 2774-2776 (1993). 11)
H. Koyama and N. Koshida,
“Photo-assisted tuning of luminescence from porous silicon”, J. Appl. Phys. 74 (10)
6365-6367 (1993). 12)
H. Koyama and N. Koshida,
“Electrical properties of luminescent porous silicon”, J. Lumin. 57,
293-299 (1993) (Invited). 13)
Y. Suda, T. Ban, T. Koizumi, H. Koyama, Y. Tezuka, S. Shin, and N. Koshida, “Surface structures and photoluminescence
mechanisms of porous Si”, Jpn.
J. Appl. Phys. 33 (1B) 581-585 (1994). 14)
T. Ozaki, M. Araki, S. Yoshimura, H. Koyama, and N. Koshida,
“Photoelectric properties of porous silicon”, J. Appl. Phys. 76 (3)
1986-1988 (1994). 15)
H. Koyama, T. Nakagawa, T. Ozaki, and N. Koshida,
“Post-anodization filtered illumination of porous silicon in HF solutions: An
effective method to improve luminescence properties”, Appl. Phys. Lett. 65 (13)
1656-1658 (1994). 16)
H. Koyama, N. Shima, T. Ozaki, and N. Koshida,
“Evidence of homogeneously broadened spectra in the visible photoluminescence
of porous silicon”, Jpn. J.
Appl. Phys. 33 (12B) L1737-L1739 (1994). 17)
T. Ozaki, T. Oguro, H. Koyama, and N. Koshida,
“The relationship between photoconduction effects and luminescent properties
of porous silicon”, Jpn. J.
Appl. Phys. 34 (2B) 946-949 (1995). 18)
N. Koshida, T. Ozaki, X. Sheng, and H.
Koyama,“Cold electron emission from
electroluminescent porous silicon diodes”, Jpn. J. Appl. Phys. 34 (6A)
L705-L707 (1995). 19)
H. Koyama and N. Koshida,
“Polarization retention in the visible photoluminescence of porous silicon”, Phys. Rev. B 52 (4) 2649-2655
(1995). 20)
H. Koyama, T. Ozaki, and N. Koshida,
“Decay dynamics of the homogeneously broadened photoluminescence of porous
silicon”, Phys. Rev. B 52
(16) R11561-R11564 (1995). 21)
M. Araki, H. Koyama, and N. Koshida,
“Optical cavity based on porous silicon superlattice technology”, Jpn. J. Appl. Phys. 35
(2B) 1041-1044 (1996). 22)
H. Koyama, N. Shima, and N. Koshida,
“Large and irregular shift of photoluminescence excitation spectra observed
in photochemically etched porous silicon”, Phys. Rev. B 53 (20)
R13291-R13294 (1996). 23)
M. Araki, H. Koyama, and N. Koshida,
“Fabrication and fundamental properties of an edge-emitting device with
step-index porous silicon waveguide”, Appl. Phys. Lett. 68 (21)
2999-3000 (1996). 24)
M. Araki, H. Koyama, and N. Koshida,
“Precisely tuned emission from porous silicon vertical optical cavity in the
visible region”, J. Appl. Phys. 80
(9) 4841-4844 (1996). 25)
M. Araki, H. Koyama, and N. Koshida,
“Controlled electroluminescence spectra of porous silicon diodes with a
vertical optical cavity”, Appl.
Phys. Lett. 69 (20) 2956-2958 (1996). 26)
T. Nakagawa, H. Koyama, and N. Koshida,
“Control of structure and optical anisotropy in porous Si by magnetic-field
assisted anodization”, Appl. Phys.
Lett. 69 (21) 3206-3208 (1996). 27)
H. Mizuno, H. Koyama, and N. Koshida,
“Oxide-free blue photoluminescence from photochemically etched porous
silicon”, Appl. Phys. Lett. 69
(25) 3779-3781 (1996). 28)
T. Oguro, H. Koyama, T. Ozaki, and N. Koshida,
“Mechanism of the visible electroluminescence from metal/porous silicon/n-Si
devices”, J. Appl. Phys. 81
(3) 1407-1412 (1997). 29)
H. Koyama and N. Koshida,
“Spectroscopic analysis of the blue-green emission from oxidized porous
silicon: possible evidence for Si-nanostructure-based mechanisms”, Solid State Commun. 103
(1) 37-41 (1997). 30)
H. Mizuno, H. Koyama, and N. Koshida,
“Photo-assisted continuous tuning of photoluminescence spectra of porous
silicon”, Thin Solid
Films 297, 61-63 (1997). 31)
X. Sheng, T. Ozaki, H. Koyama, N. Koshida,
T. Yoshikawa, M. Yamaguchi, and K. Ogasawara, “Operation of
electroluminescent porous silicon diodes as surface-emitting cold cathodes”, Thin Solid Films 297,
314-316 (1997). 32)
M. Araki, H. Koyama, and N. Koshida,
“Functional properties of luminescent porous silicon as a component of
optoelectronic integration”, Superlattices
and Microstructures 22 (3) 365-370 (1997). 33)
X. Sheng, H. Koyama, N. Koshida, S. Iwasaki,
N. Negishi, T. Chuman, T. Yoshikawa, and K. Ogasawara, “Improved cold
electron emission characteristics of electroluminescent porous silicon
diodes”, J. Vac. Sci. Technol. B 15
(5) 1661-1665 (1997). 34)
H. Koyama, Y. Matsushita, and N. Koshida,
“Activation of blue emission from oxidized porous silicon by annealing in
water vapor”, J. Appl. Phys. 83
(3) 1776-1778 (1998). 35)
X. Sheng, H. Koyama, and N. Koshida,
“Efficient surface-emitting cold cathodes based on electroluminescent porous
silicon diodes”, J. Vac. Sci.
Technol. B 16 (2) 793-795 (1998). 36)
S. Tanaka, H. Koyama, and N. Koshida,
“Photoluminescence decay dynamics of ion-irradiated porous silicon: evidence
for the absence of carrier migration”, Appl. Phys. Lett. 73 (16) 2334-2336
(1998). Conference Proceedings 1)
H. Koyama and N. Koshida, “Visible
photoluminescent properties of porous silicon”, Extended Abstracts of the
1991 Int. Conf. Solid State Devices and Materials, Yokohama, 1991 (Business
Center for Academic Societies Japan, Tokyo, 1991) pp.314-316. 2)
N. Koshida and H. Koyama, “Visible
electro- and photoluminescence from porous silicon and its related
optoelectronic properties”, Light Emission from Silicon, MRS Symp.
Proc. Vol. 256, S. S. Iyer, R. T. Collins, and L. T. Canham, ed. (Mater. Res.
Soc., Pittsburgh, PA, 1992) pp. 219-222. 3)
N. Koshida and H. Koyama,
“Optoelectronic characterizations of porous silicon”, Microcrystalline
Semiconductors: Materials Science and Devices, MRS Symp. Proc. Vol. 283,
P. M. Fauchet, C. C. Tsai, L. T. Canham, I. Shimizu, and Y. Aoyagi, ed.
(Mater. Res. Soc., Pittsburgh, PA, 1993) pp.337-342. 4)
Y. Suda, T. Ban, T. Koizumi, H. Koyama, Y. Tezuka, S. Shin, and N. Koshida, “Surface structures and photoluminescence
mechanisms of porous Si”, Extended Abstracts of the 1993 Int. Conf. Solid
State Devices and Materials, Makuhari, 1993
(Business Center for Academic Societies Japan, Tokyo, 1993) pp.651-653. 5)
H. Koyama, T. Oguro, T. Ozaki, Y. Suda, and N. Koshida, “Electronic and optoelectronic analyses of
visible luminescence mechanism of porous silicon”, Semiconductor
Silicon/1994, Proc. Seventh Int. Symp. Silicon Materials Science and
Technology, H. R. Huff, W. Bergholz, and K. Sumino, ed. (The Electrochem. Soc., Pennington, NJ, 1994) pp.511-522. 6)
T. Ozaki, T. Oguro, H. Koyama, and N. Koshida,
“Relation between photoconduction effects and luminescent properties of
porous silicon”, Extended Abstracts of the 1994 Int. Conf. Solid State
Devices and Materials, Yokohama, 1994 (Business Center for Academic Societies
Japan, Tokyo, 1994) pp.751-753. 7)
N. Koshida, H. Mizuno, H. Koyama, and G. J.
Collins, “Visible electroluminescence from porous silicon diodes with
immersed conducting polymer contacts”, Proc. Int. Conf. Optical Properties of
Nanostructures, Sendai, 1994 [Jpn. J. Appl. Phys.
34, Suppl. 34-1 (1995)] pp. 92-94. 8)
N. Koshida, H. Koyama, T. Ozaki, M.
Araki, T. Oguro, and H. Mizuno, “Optoelectronic effects in porous silicon
related to the visible luminescence mechanism”, Microcrystalline and
Nanocrystalline Semiconductors, MRS Symp. Proc. Vol. 358, R. W. Collins,
C. C. Tsai, M. Hirose, F. Koch, and L. Brus, ed. (Mater. Res. Soc.,
Pittsburgh, PA, 1995) pp.695-700. 9)
M. Araki, H. Koyama, and N. Koshida,
“Optical cavity based on porous silicon superlattice technology”, Extended
Abstracts of the 1995 Int. Conf. Solid State Devices and Materials, Osaka,
1995 (Business Center for Academic Societies Japan, Tokyo, 1995) pp. 371-373. 10)
X. Sheng, T. Ozaki, H. Koyama, and N. Koshida,
“Properties of porous silicon LED as a surface-emitting cold cathode”,
Proceedings of the International Symposium on Advanced Luminescent Materials,
D.J. Lockwood, P.M. Fauchet, N. Koshida, and S.R.J.
Brueck, ed. (The Electrochem. Soc., Pennington, NJ,
1996) pp.87-93. 11)
M. Araki, H. Koyama, and N. Koshida,
“Precisely tuned optical cavity using porous silicon superlattice
structures”, Proceedings of the International Symposium on Advanced
Luminescent Materials, D.J. Lockwood, P.M. Fauchet, N. Koshida,
and S.R.J. Brueck, ed. (The Electrochem. Soc.,
Pennington, NJ, 1996) pp.139-145. 12)
K. Ueno, T. Ozaki, H. Koyama, and N. Koshida,
“Nonlinear electrical functions of porous silicon light-emitting diodes”, Advances
in Microcrystalline and Nanocrystalline Semiconductors-1996, MRS Symp.
Proc. Vol. 452, R.W. Collins, P.M. Fauchet, I. Shimizu, J.-C. Vial, T.
Shimada, and A.P. Alivisatos, ed. (Mater. Res.
Soc., Pittsburgh, PA, 1997) pp. 699-704. 13)
T. Nakagawa, H. Koyama and N. Koshida, “Effects
of external magnetic field on the formation and optical properties of
luminescent porous silicon”, Proceedings of the International Symposium on
Pits and Pores: Formation, Properties and Significance for Advanced
Luminescent Materials, P. Schmuki, D.J. Lockwood, H.S. Isaacs, and A. Bsiesy, ed.(The Electrochem.
Soc., Pennington, NJ, 1997) pp. 235-241. 14)
M. Araki, M. Takahashi, H. Koyama, and N. Koshida,
“Performances of porous silicon optical waveguides”, Materials and Devices
for Silicon-Based Optoelectronics, MRS Symp. Proc. Vol. 486, A. Polman,
S. Coffa, and R. Soref ed. (Mater. Res. Soc.,
Warrendale, PA, 1998) pp. 107-112. 15)
N. Koshida, E. Takizawa, H. Mizuno, S. Arai, H.
Koyama,
and T. Sameshima, “Electroluminescent devices based on polycrystalline
silicon films for large-area applications”, Materials and Devices for
Silicon-Based Optoelectronics, MRS Symp. Proc. Vol. 486, A. Polman, S. Coffa, and R. Soref ed. (Mater. Res. Soc., Warrendale,
PA, 1998) pp. 151-156. |
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3. Work at the University of
Rochester Journal papers 1)
H. Koyama and P.M. Fauchet, “Very large
continuous-wave-laser-induced optical absorption in porous silicon films:
evidence for thermal effects”, Appl.
Phys. Lett. 73 (22) 3259-3261 (1998). 2)
H. Koyama, L. Tsybeskov, and P.M. Fauchet, “Strongly
nonlinear luminescence in oxidized porous silicon films”, J. Lumin. 80,
99-102 (1999). 3)
H. Koyama and P.M. Fauchet, “Laser-induced thermal effects
on the optical properties of free-standing porous silicon films”, J. Appl. Phys. 87 (4)
1788-1794 (2000). 4)
H. Koyama and P.M. Fauchet, “Anisotropic polarization memory
in thermally oxidized porous silicon”, Appl. Phys. Lett. 77 (15)
2316-2318 (2000). Conference Proceedings 1)
H. Koyama and P.M. Fauchet, “Strongly superlinear
light emission and large induced absorption in oxidized porous silicon
films”, Microcrystalline and Nanocrystalline Semiconductors-1998, MRS
Symp. Proc. Vol. 536, L.T. Canham, M.J. Sailor, K. Tanaka, and C.-C. Tsai ed.
(Mater. Res. Soc., Warrendale, PA, 1999) pp. 9-14. 2)
H.A. Lopez, S. Chan, L. Tsybeskov, H. Koyama, V.P.
Bondarenko, and P.M. Fauchet, “Integration of multilayers in Er-doped porous
silicon structures and advances in 1.5 μm
optoelectronic devices”, Microcrystalline and Nanocrystalline
Semiconductors-1998, MRS Symp. Proc. Vol. 536, L.T. Canham, M.J. Sailor,
K. Tanaka, and C.-C. Tsai ed. (Mater. Res. Soc., Warrendale, PA, 1999) pp.
135-140. 3)
C.C. Striemer, S. Chan, H.A. Lopez, K.D. Hirschman,
H. Koyama, Q. Zhu, L. Tsybeskov, P.M. Fauchet, N.M. Kalkhoran, and L. Depaulis, “LEDs based on oxidized
porous polysilicon on a transparent substrate”, Microcrystalline and
Nanocrystalline Semiconductors-1998, MRS Symp. Proc. Vol. 536, L.T.
Canham, M.J. Sailor, K. Tanaka, and C.-C. Tsai ed. (Mater. Res. Soc.,
Warrendale, PA, 1999) pp. 511-515. 4)
H. Koyama and P.M. Fauchet, “Anomalous behavior of
polarization memory in oxidized porous silicon”, Proc. 1st Int. Symp.
Advanced Luminescent Materials and Quantum Confinement, M. Cahay, S. Bandyopadhyay, D.J. Lockwood, J.P. Leburton, N. Koshida, M.
Meyyappan, and T. Sakamoto ed. (The Electrochem.
Soc., Pennington, NJ, 1999) pp. 21-26. |