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過去の論文・学会発表 兵庫教育大学 大学院 小山英樹 |
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１．東京農工大学在学中の研究成果 ●論文 1)
N. Koshida, H. Koyama, and Y.
Kiuchi, “Photoelectrochemical behavior of n-type porous-Si electrodes”, Jpn. J. Appl. Phys. 25 (7)
1069-1072 (1986). 2)
H. Koyama and N. Koshida, “Photoelectrochemical
effects of surface modification of n-type Si with porous layer”, J. Electrochem. Soc. 138 (1) 254-260
(1991). ●学会発表 1) 小山英樹，越田信義，木内雄二，“n型多孔質Siを用いた光化学電池”， 第32回応用物理学関係連合講演会 31p-A-8，1985年3月． 2) 越前谷一彦，小山英樹，越田信義，木内雄二，“多孔質Si電極を用いた光電気化学太陽電池”，第34回応用物理学関係連合講演会 29a-S-7，1987年3月． |
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●論文 1) 天野壮，横山精一，小山英樹，天野覚，望月孝晏，“半導体レーザー励起NYABグリーンレーザー”，レーザー研究 17
(12) 895-898 (1989). ●学会発表 1) 小山英樹，横山精一，天野壮，望月孝晏，“LD励起1.3μm, 0.9μm Nd:YAGレーザー”，第36回応用物理学関係連合講演会 2p-PA-5， 1989年3月，予稿集 p.855． 2) 藤野正志，小山英樹，横山精一，天野壮，天野覚，望月孝晏，“LD励起Nd:YAGレーザーによるブルー光発生”，第50回応用物理学会学術講演会 27a-ZL-4，1989年9月，予稿集 p. 807． 3) 横山精一，藤野正志，小山英樹，天野壮，天野覚，望月孝晏，“LD励起NYABグリーンレーザー”，レーザー学会学術講演会第10回年次大会
25aV9，1990年1月． ●その他 1) 天野壮，横山精一，小山英樹，天野覚，望月孝晏，“LD励起固体レーザーの現状”
日本学術振興会 光と電波の境界領域 第130委員会研究会資料
(1989) pp.7-12. |
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●論文 1)
N. Koshida and H. Koyama, “Efficient
visible photoluminescence from porous silicon”, Jpn. J. Appl. Phys. 30
(7B) L1221-L1223 (1991). 2)
H. Koyama, M. Araki, Y. Yamamoto, and N. Koshida,
“Visible photoluminescence of porous Si and its related optical properties”, Jpn. J. Appl. Phys. 30
(12B) 3606-3609 (1991). 3)
N. Koshida and H. Koyama,“Visible
electroluminescence form porous silicon”, Appl. Phys. Lett. 60 (3)
347-349 (1992). 4)
N. Koshida and H. Koyama,“Visible light emission
from porous silicon”, Optoelectronics -Devices and Technologies- 7 (1)
103-115 (1992) (Invited). 5)
N. Koshida and H. Koyama,
“Photoluminescent and electroluminescent properties of porous silicon”, Nanotechnology 3,
192-195 (1992). 6) 小山英樹，越田信義
“多孔質シリコンの可視域発光特性” 光学21 (10) 698-704 (1992). 7) 小山英樹，越田信義
“多孔質シリコンの構造と可視発光” 表面科学 13 (7)
402-408 (1992). 8) 越田信義，小山英樹 “多孔質シリコンの可視発光” 応用物理 61 (8) 805-808 (1992). 9) 越田信義，小山英樹 “光るシリコンの発光機構：バンド構造変化と表面束縛状態の相補的効果” 応用物理 61 (12) 1269-1271 (1992). 10)
T. Ueno, Y. Akiba, T. Shinohara, H. Koyama, N. Koshida,
and Y. Tarui, “Radiative transition with visible light in electrochemical
anodized polycrystalline silicon”, Jpn. J. Appl. Phys. 32
(1A/B) L5-L7 (1993). 11)
H. Koyama, T. Oguro, and N. Koshida,
“Electrical quenching of photoluminescence from porous silicon”, Appl. Phys. Lett. 62 (24)
3177-3179 (1993). 12)
Y. Uchida, N. Koshida, H. Koyama, and Y.
Yamamoto, “Paramagnetic center in porous silicon: A dangling bond with C3V
symmetry”, Appl. Phys. Lett. 63
(7) 961-963 (1993). 13)
N. Koshida, H. Koyama, Y. Yamamoto,
and G. J. Collins, “Visible electroluminescence from porous silicon diodes
with an electropolymerized contact”, Appl. Phys. Lett. 63 (19)
2655-2657 (1993). 14)
N. Koshida, H. Koyama, Y. Suda, Y.
Yamamoto, M. Araki, T. Saito, K. Sato, N. Sata, and S. Shin, “Optical
characterization of porous silicon by synchrotron radiation reflectance
spectra analyses”, Appl. Phys.
Lett. 63 (20) 2774-2776 (1993). 15)
H. Koyama and N. Koshida,
“Photo-assisted tuning of luminescence from porous silicon”, J. Appl. Phys. 74 (10)
6365-6367 (1993). 16)
H. Koyama and N. Koshida,
“Electrical properties of luminescent porous silicon”, J. Lumin. 57,
293-299 (1993) (Invited). 17) 越田信義，小山英樹，須田良幸
“ポーラスシリコン” 表面科学 14 (2) 85-89 (1993). 18) 越田信義，小山英樹 “シリコンの発光現象” 電子情報通信学会誌 76 (5) 498-501 (1993). 19)
Y. Suda, T. Ban, T. Koizumi, H. Koyama, Y. Tezuka, S. Shin, and N. Koshida, “Surface structures and photoluminescence
mechanisms of porous Si”, Jpn.
J. Appl. Phys. 33 (1B) 581-585 (1994). 20)
T. Ozaki, M. Araki, S. Yoshimura, H. Koyama, and N. Koshida,
“Photoelectric properties of porous silicon”, J. Appl. Phys. 76 (3)
1986-1988 (1994). 21)
H. Koyama, T. Nakagawa, T. Ozaki, and N. Koshida,
“Post-anodization filtered illumination of porous silicon in HF solutions: An
effective method to improve luminescence properties”, Appl. Phys. Lett. 65 (13)
1656-1658 (1994). 22)
H. Koyama, N. Shima, T. Ozaki, and N. Koshida,
“Evidence of homogeneously broadened spectra in the visible photoluminescence
of porous silicon”, Jpn. J.
Appl. Phys. 33 (12B) L1737-L1739 (1994). 23)
T. Ozaki, T. Oguro, H. Koyama, and N. Koshida,
“The relationship between photoconduction effects and luminescent properties
of porous silicon”, Jpn. J.
Appl. Phys. 34 (2B) 946-949 (1995). 24)
N. Koshida, T. Ozaki, X. Sheng, and H.
Koyama,“Cold electron emission from
electroluminescent porous silicon diodes”, Jpn. J. Appl. Phys. 34 (6A)
L705-L707 (1995). 25)
H. Koyama and N. Koshida,
“Polarization retention in the visible photoluminescence of porous silicon”, Phys. Rev. B 52 (4) 2649-2655
(1995). 26)
H. Koyama, T. Ozaki, and N. Koshida,
“Decay dynamics of the homogeneously broadened photoluminescence of porous
silicon”, Phys. Rev. B 52
(16) R11561-R11564 (1995). 27)
M. Araki, H. Koyama, and N. Koshida,
“Optical cavity based on porous silicon superlattice technology”, Jpn. J. Appl. Phys. 35
(2B) 1041-1044 (1996). 28)
H. Koyama, N. Shima, and N. Koshida,
“Large and irregular shift of photoluminescence excitation spectra observed
in photochemically etched porous silicon”, Phys. Rev. B 53 (20)
R13291-R13294 (1996). 29)
M. Araki, H. Koyama, and N. Koshida,
“Fabrication and fundamental properties of an edge-emitting device with
step-index porous silicon waveguide”, Appl. Phys. Lett. 68 (21)
2999-3000 (1996). 30)
M. Araki, H. Koyama, and N. Koshida,
“Precisely tuned emission from porous silicon vertical optical cavity in the
visible region”, J. Appl. Phys. 80
(9) 4841-4844 (1996). 31)
M. Araki, H. Koyama, and N. Koshida,
“Controlled electroluminescence spectra of porous silicon diodes with a
vertical optical cavity”, Appl.
Phys. Lett. 69 (20) 2956-2958 (1996). 32)
T. Nakagawa, H. Koyama, and N. Koshida,
“Control of structure and optical anisotropy in porous Si by magnetic-field
assisted anodization”, Appl. Phys.
Lett. 69 (21) 3206-3208 (1996). 33)
H. Mizuno, H. Koyama, and N. Koshida,
“Oxide-free blue photoluminescence from photochemically etched porous
silicon”, Appl. Phys. Lett. 69
(25) 3779-3781 (1996). 34)
T. Oguro, H. Koyama, T. Ozaki, and N. Koshida,
“Mechanism of the visible electroluminescence from metal/porous silicon/n-Si
devices”, J. Appl. Phys. 81
(3) 1407-1412 (1997). 35)
H. Koyama and N. Koshida,
“Spectroscopic analysis of the blue-green emission from oxidized porous
silicon: possible evidence for Si-nanostructure-based mechanisms”, Solid State Commun. 103
(1) 37-41 (1997). 36)
H. Mizuno, H. Koyama, and N. Koshida,
“Photo-assisted continuous tuning of photoluminescence spectra of porous
silicon”, Thin Solid
Films 297, 61-63 (1997). 37)
X. Sheng, T. Ozaki, H. Koyama, N. Koshida,
T. Yoshikawa, M. Yamaguchi, and K. Ogasawara, “Operation of
electroluminescent porous silicon diodes as surface-emitting cold cathodes”, Thin Solid Films 297,
314-316 (1997). 38)
M. Araki, H. Koyama, and N. Koshida,
“Functional properties of luminescent porous silicon as a component of
optoelectronic integration”, Superlattices
and Microstructures 22 (3) 365-370 (1997). 39)
X. Sheng, H. Koyama, N. Koshida, S. Iwasaki,
N. Negishi, T. Chuman, T. Yoshikawa, and K. Ogasawara, “Improved cold
electron emission characteristics of electroluminescent porous silicon
diodes”, J. Vac. Sci. Technol. B 15
(5) 1661-1665 (1997). 40)
H. Koyama, Y. Matsushita, and N. Koshida,
“Activation of blue emission from oxidized porous silicon by annealing in
water vapor”, J. Appl. Phys. 83
(3) 1776-1778 (1998). 41)
X. Sheng, H. Koyama, and N. Koshida,
“Efficient surface-emitting cold cathodes based on electroluminescent porous
silicon diodes”, J. Vac. Sci.
Technol. B 16 (2) 793-795 (1998). 42)
S. Tanaka, H. Koyama, and N. Koshida,
“Photoluminescence decay dynamics of ion-irradiated porous silicon: evidence
for the absence of carrier migration”, Appl. Phys. Lett. 73 (16) 2334-2336
(1998). ●学会発表 1)
H. Koyama and N. Koshida, “Visible
photoluminescent properties of porous silicon”, Extended Abstracts of the
1991 Int. Conf. Solid State Devices and Materials, Yokohama, 1991 (Business
Center for Academic Societies Japan, Tokyo, 1991) pp.314-316. 2)
N. Koshida and H. Koyama, “Visible
electro- and photoluminescence from porous silicon and its related
optoelectronic properties”, Light Emission from Silicon, MRS Symp.
Proc. Vol. 256, S. S. Iyer, R. T. Collins, and L. T. Canham, ed. (Mater. Res.
Soc., Pittsburgh, PA, 1992) pp. 219-222. 3)
N. Koshida and H. Koyama,
“Optoelectronic characterizations of porous silicon”, Microcrystalline
Semiconductors: Materials Science and Devices, MRS Symp. Proc. Vol. 283,
P. M. Fauchet, C. C. Tsai, L. T. Canham, I. Shimizu, and Y. Aoyagi, ed.
(Mater. Res. Soc., Pittsburgh, PA, 1993) pp.337-342. 4)
Y. Suda, T. Ban, T. Koizumi, H. Koyama, Y. Tezuka, S. Shin, and N. Koshida, “Surface structures and photoluminescence
mechanisms of porous Si”, Extended Abstracts of the 1993 Int. Conf. Solid
State Devices and Materials, Makuhari, 1993
(Business Center for Academic Societies Japan, Tokyo, 1993) pp.651-653. 5)
H. Koyama, T. Oguro, T. Ozaki, Y. Suda, and N. Koshida, “Electronic and optoelectronic analyses of
visible luminescence mechanism of porous silicon”, Semiconductor
Silicon/1994, Proc. Seventh Int. Symp. Silicon Materials Science and
Technology, H. R. Huff, W. Bergholz, and K. Sumino, ed. (The Electrochem. Soc., Pennington, NJ, 1994) pp.511-522. 6)
T. Ozaki, T. Oguro, H. Koyama, and N. Koshida,
“Relation between photoconduction effects and luminescent properties of
porous silicon”, Extended Abstracts of the 1994 Int. Conf. Solid State
Devices and Materials, Yokohama, 1994 (Business Center for Academic Societies
Japan, Tokyo, 1994) pp.751-753. 7)
N. Koshida, H. Mizuno, H. Koyama, and G. J.
Collins, “Visible electroluminescence from porous silicon diodes with
immersed conducting polymer contacts”, Proc. Int. Conf. Optical Properties of
Nanostructures, Sendai, 1994 [Jpn. J. Appl. Phys.
34, Suppl. 34-1 (1995)] pp. 92-94. 8)
N. Koshida, H. Koyama, T. Ozaki, M.
Araki, T. Oguro, and H. Mizuno, “Optoelectronic effects in porous silicon
related to the visible luminescence mechanism”, Microcrystalline and
Nanocrystalline Semiconductors, MRS Symp. Proc. Vol. 358, R. W. Collins,
C. C. Tsai, M. Hirose, F. Koch, and L. Brus, ed. (Mater. Res. Soc.,
Pittsburgh, PA, 1995) pp.695-700. 9)
M. Araki, H. Koyama, and N. Koshida,
“Optical cavity based on porous silicon superlattice technology”, Extended
Abstracts of the 1995 Int. Conf. Solid State Devices and Materials, Osaka,
1995 (Business Center for Academic Societies Japan, Tokyo, 1995) pp. 371-373. 10)
X. Sheng, T. Ozaki, H. Koyama, and N. Koshida,
“Properties of porous silicon LED as a surface-emitting cold cathode”,
Proceedings of the International Symposium on Advanced Luminescent Materials,
D.J. Lockwood, P.M. Fauchet, N. Koshida, and S.R.J.
Brueck, ed. (The Electrochem. Soc., Pennington, NJ,
1996) pp.87-93. 11)
M. Araki, H. Koyama, and N. Koshida,
“Precisely tuned optical cavity using porous silicon superlattice
structures”, Proceedings of the International Symposium on Advanced
Luminescent Materials, D.J. Lockwood, P.M. Fauchet, N. Koshida,
and S.R.J. Brueck, ed. (The Electrochem. Soc.,
Pennington, NJ, 1996) pp.139-145. 12)
K. Ueno, T. Ozaki, H. Koyama, and N. Koshida,
“Nonlinear electrical functions of porous silicon light-emitting diodes”, Advances
in Microcrystalline and Nanocrystalline Semiconductors-1996, MRS Symp.
Proc. Vol. 452, R.W. Collins, P.M. Fauchet, I. Shimizu, J.-C. Vial, T.
Shimada, and A.P. Alivisatos, ed. (Mater. Res.
Soc., Pittsburgh, PA, 1997) pp. 699-704. 13)
T. Nakagawa, H. Koyama and N. Koshida, “Effects
of external magnetic field on the formation and optical properties of
luminescent porous silicon”, Proceedings of the International Symposium on
Pits and Pores: Formation, Properties and Significance for Advanced
Luminescent Materials, P. Schmuki, D.J. Lockwood, H.S. Isaacs, and A. Bsiesy, ed.(The Electrochem.
Soc., Pennington, NJ, 1997) pp. 235-241. 14)
M. Araki, M. Takahashi, H. Koyama, and N. Koshida,
“Performances of porous silicon optical waveguides”, Materials and Devices
for Silicon-Based Optoelectronics, MRS Symp. Proc. Vol. 486, A. Polman,
S. Coffa, and R. Soref ed. (Mater. Res. Soc.,
Warrendale, PA, 1998) pp. 107-112. 15)
N. Koshida, E. Takizawa, H. Mizuno, S. Arai, H.
Koyama,
and T. Sameshima, “Electroluminescent devices based on polycrystalline
silicon films for large-area applications”, Materials and Devices for
Silicon-Based Optoelectronics, MRS Symp. Proc. Vol. 486, A. Polman, S. Coffa, and R. Soref ed. (Mater. Res. Soc., Warrendale,
PA, 1998) pp. 151-156. （国内学会は省略） ●その他 1) 小山英樹，越田信義
“期待される新光源（１）超微細構造材料：多孔質シリコン” オプトロニクス 1993年7月号，pp.70-75. 2) 小山英樹，越田信義
“多孔質Siの可視発光とその機構” 第２１回薄膜・表面物理セミナーテキスト（応用物理学会，1993）pp. 111-123. 3) 小山英樹，松下友香，熊谷文香，越田信義
“熱酸化した多孔質シリコンの青色発光特性 ―Siナノ構造の直接遷移発光の可能性―” 超微粒子とクラスター懇談会 第１回研究会 講演予稿集 pp. 155-158 (1997). 4) 小山英樹他120名共著 “図解光デバイス辞典” オプトロニクス社 (1996)． |
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●論文 1)
H. Koyama and P.M. Fauchet, “Very large
continuous-wave-laser-induced optical absorption in porous silicon films:
evidence for thermal effects”, Appl.
Phys. Lett. 73 (22) 3259-3261 (1998). 2)
H. Koyama, L. Tsybeskov, and P.M. Fauchet, “Strongly
nonlinear luminescence in oxidized porous silicon films”, J. Lumin. 80,
99-102 (1999). 3)
H. Koyama and P.M. Fauchet, “Laser-induced thermal effects
on the optical properties of free-standing porous silicon films”, J. Appl. Phys. 87 (4)
1788-1794 (2000). [HEART] 4)
H. Koyama and P.M. Fauchet, “Anisotropic polarization memory
in thermally oxidized porous silicon”, Appl. Phys. Lett. 77 (15)
2316-2318 (2000). [HEART] ●学会発表 1)
H. Koyama and P.M. Fauchet, “Strongly superlinear
light emission and large induced absorption in oxidized porous silicon
films”, Microcrystalline and Nanocrystalline Semiconductors-1998, MRS
Symp. Proc. Vol. 536, L.T. Canham, M.J. Sailor, K. Tanaka, and C.-C. Tsai ed.
(Mater. Res. Soc., Warrendale, PA, 1999) pp. 9-14. 2)
H.A. Lopez, S. Chan, L. Tsybeskov, H. Koyama, V.P.
Bondarenko, and P.M. Fauchet, “Integration of multilayers in Er-doped porous
silicon structures and advances in 1.5 μm
optoelectronic devices”, Microcrystalline and Nanocrystalline
Semiconductors-1998, MRS Symp. Proc. Vol. 536, L.T. Canham, M.J. Sailor,
K. Tanaka, and C.-C. Tsai ed. (Mater. Res. Soc., Warrendale, PA, 1999) pp.
135-140. 3)
C.C. Striemer, S. Chan, H.A. Lopez, K.D. Hirschman,
H. Koyama, Q. Zhu, L. Tsybeskov, P.M. Fauchet, N.M. Kalkhoran, and L. Depaulis, “LEDs based on oxidized
porous polysilicon on a transparent substrate”, Microcrystalline and
Nanocrystalline Semiconductors-1998, MRS Symp. Proc. Vol. 536, L.T.
Canham, M.J. Sailor, K. Tanaka, and C.-C. Tsai ed. (Mater. Res. Soc.,
Warrendale, PA, 1999) pp. 511-515. 4)
H. Koyama and P.M. Fauchet, “Anomalous behavior of
polarization memory in oxidized porous silicon”, Proc. 1st Int. Symp.
Advanced Luminescent Materials and Quantum Confinement, M. Cahay, S. Bandyopadhyay, D.J. Lockwood, J.P. Leburton, N. Koshida, M.
Meyyappan, and T. Sakamoto ed. (The Electrochem.
Soc., Pennington, NJ, 1999) pp. 21-26. 5) 小山英樹，P.M. Fauchet，“熱酸化したポーラスシリコンにおける偏光保存の異方性”，第47回応用物理学関係連合講演会（青山学院大学） 31p-YC-5，2000年3月，予稿集 p. 921． |
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